Comparative Study on Nonradiative Recombination Centers in Proton Irradiated InAs/GaAs Quantum Dot Structure by Two Wavelength Excited Photoluminescence

被引:0
作者
Haque, M. D. [1 ]
Kamata, N. [1 ]
Sato, S-I. [2 ]
Hubbard, S. M. [3 ]
机构
[1] Saitama Univ, Dept Funct Mat Sci, Saitama 3388570, Japan
[2] Natl Inst Quantum & Radiol Sci & Technol QST, Quantum Beam Sci Res Directorate, Takasaki, Gunma 3701292, Japan
[3] Rochester Inst Technol, NanoPower Res Labs, Rochester, NY 14623 USA
来源
2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | 2017年
关键词
Intermediate band; NRR; proton irradiations; Quantum dots; TWEPL; DEEP LEVELS; IMPLANTATION; DEFECTS; STATES;
D O I
暂无
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Comparative study on nonradiative recombination (NRR) centers in InAs/GaAs quantum dot (QD) structure generated by 3 MeV proton irradiation is performed by two wavelength excited photoluminescence (TWEPL). The above-gap excitation (AGE) source of 2.33 eV or 1.26 eV is used to excite GaAs host material or InAs QDs, respectively. The QD PL intensity decreased after irradiation of below-gap excitation (BGE) of 0.75 eV over AGE, indicating a pair of NRR centers activated. The proton irradiation at fluence of 7x10(11)cm(-2) reduces the NRR density, while that of 4x10(12)cm(-2) increases it. Defect formation, carrier injection and their fluence dependence explain experimental results.
引用
收藏
页码:552 / 557
页数:6
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