Metal-based room-temperature operating single electron devices using scanning probe oxidation

Coulomb oscillation was clearly observed at room temperature in the single electron transistor fabricated by atomic force microscopy (AFM) nano-oxidation process. In order to obtain a clear Coulomb oscillation at room temperature, new and improved fabrication processes and measurement systems such as a pulse-mode AFM nano-oxidation process and a triaxial active feedback measurement system are introduced. The Coulomb oscillation peaks appear with the period of 1.9V at the drain bias conditions of 0.25 V and 0.3 V. The current modulation rate ranges from 20% to 30%.