Selective-area vapor-liquid-solid growth of tunable InAsP quantum dots in nanowires

被引：58

作者：

Dalacu, Dan ^{[1
]}

Mnaymneh, Khaled ^{[1
]}

Wu, Xiaohua ^{[1
]}

Lapointe, Jean ^{[1
]}

Aers, Geof C. ^{[1
]}

Poole, Philip J. ^{[1
]}

Williams, Robin L. ^{[1
]}

机构：

[1] CNR, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 25期

关键词：

excitons; III-V semiconductors; indium compounds; lithography; nanofabrication; nanowires; photoluminescence; semiconductor growth; semiconductor quantum wires; INP NANOWIRES; SINGLE;

D O I：

10.1063/1.3600777

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A process is described where the position, size, and cladding of an InP nanowire with an embedded InAsP quantum dot are determined by design through lithography, processing, and growth. The vapor-liquid-solid growth mode on a patterned substrate is used to grow the InP core and defines the quantum dot size to better than +/- 2 nm while selective-area growth is used to define the cladding thickness. The clad nanowires emit efficiently in the range lambda=0.95-1.15 mu m. Photoluminescence measurements are used to quantify the dependence of the excitonic energy level structure on quantum dot size for diameters 10-40 nm. [doi:10.1063/1.3600777]

引用

页数：3

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