Effect of band anticrossing on the optical transitions in GaAs1-xNx/GaAs multiple quantum wells -: art. no. 085320

被引：81

作者：

Wu, J ^{[1
]}

Shan, W

Walukiewicz, W

Yu, KM

Ager, JW

Haller, EE

Xin, HP

Tu, CW

机构：

[1] Univ Calif Berkeley, Appl Sci & Technol Grad Grp, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[4] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

PHYSICAL REVIEW B | 2001年 / 64卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.64.085320

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Interband transitions in GaAs1-xNx/GaAs multiple quantum wells were studied at room temperature by photomodulated reflectance spectroscopy as a function of well width (3-9 nm). the nitrogen concentration (0.012<x<0.028), and hydrostatic pressure (0-64 kbar). All experimental data can be quantitatively explained using the dispersion relationship obtained from a band anticrossing model to calculate electron confinement effects in a finite depth quantum well. The results are consistent with a nitrogen-induced large increase of the electron effective mass in the GaAsN quantum wells.

引用

页码：853201 / 853204

页数：4

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