Monolithic integration of 3-D electroplated microstructures with unlimited number of levels using planarization with a sacrificial metallic mold (PSMM)

被引：14

作者：

Yoon, JB ^{[1
]}

Han, CH ^{[1
]}

Yoon, E ^{[1
]}

Kim, CK ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Yusong Gu, Taejon 305701, South Korea

来源：

MEMS '99: TWELFTH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST | 1999年

关键词：

D O I：

10.1109/MEMSYS.1999.746900

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

A new monolithic integration method for 3-D electroplated microstructures of unlimited number of levels has been developed using unique planarization with a sacrificial metallic mold (PSMM). Contrary to the conventional electroplating mold of photoresist or polyimide, the sacrificial metallic mold (SMM) is used for multiple functions: a sacrificial layer, a planarization layer, and a seed layer for the next-level electroplating as well. We have successfully demonstrated various three-level metallic microstructures, such as levitated on-chip inductors, microbridges, micro-cantilevers, and micro-mirrors. The RF performance of the fabricated inductor has shown excellent results of 5nH, Q-factor of 50 at 5GHz on glass. This method is very simple, highly adaptable, and IC-compatible, so that it can be used as a versatile tool to integrate various 3-D metallic microstructures in multiple levels.

引用

页码：624 / 629

页数：6

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