Effect of UV illumination on deposition of low-k Si-O-C(-H) films by PECVD

被引：3
作者：
Lee, HJ
Yang, CS
Chi, CK
机构：
[1] Jeju Natl Univ, Fac Mech Energy & Prod Engn, Jeju 690756, South Korea
[2] Jeju Natl Univ, Dept Phys, Jeju 690756, South Korea
来源：
DESIGNING, PROCESSING AND PROPERTIES OF ADVANCED ENGINEERING MATERIALS, PTS 1 AND 2 | 2004年 / 449-4卷
关键词：
UV illumination; plasma CVD; low dielectric constant; trimethylsilane (TMS);
D O I：
10.4028/www.scientific.net/MSF.449-452.473
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The characteristics of plasma are important for the deposition of SiOC(-H) low dielectric thin film. The effect of UV light illumination on the plasma parameter in the capacitive coupled plasma chemical vapor deposition (CCP-CVD) system is investigated. The electron density is almost not changed, but the electron temperature decreases by UV light illumination. The deposition rate increases and the dielectric constant of the film is lowered with UV light.
引用
收藏
页码：473 / 476
页数：4
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