Magnetic properties of GaAs/δ⟨Mn⟩/GaAs/InxGa1-xAs/GaAs quantum wells

被引：17

作者：

Aronzon, B. A. ^{[1
,2
]}

Lagutin, A. S. ^{[1
]}

Ryl'kov, V. V. ^{[1
,2
]}

Tugushev, V. V. ^{[1
]}

Men'shov, V. N. ^{[1
]}

Lashkul, A. V. ^{[3
]}

Laiho, R. ^{[3
]}

Vikhrova, O. V. ^{[4
]}

Danilov, Yu. A. ^{[4
]}

Zvonkov, B. N. ^{[4
]}

机构：

[1] Russian Res Ctr Kurchatov Inst, Moscow 123182, Russia

[2] Russian Acad Sci, Inst Theoret & Appl Electrodynam, Moscow 127412, Russia

[3] Univ Turku, Dept Phys, Wihuri Phys Lab, FIN-20014 Turku, Finland

[4] Nizhnii Novgorod State Univ, Tech Phys Res Inst, Nizhnii Novgorod 603950, Russia

来源：

JETP LETTERS | 2008年 / 87卷 / 03期

关键词：

D O I：

10.1134/S0021364008030107

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The field and temperature dependences of the magnetization of GaAs/delta < Mn >/GaAs/InxGa1 -xAs/GaAs quantum wells with the delta < Mn > layer separated from the well by a 3-nm GaAs spacer have been studied in the temperature range of 3-300 K in a magnetic field up to 6 T. An external magnetic-field-induced phase transition to a ferromagnetic state with a magnetization hysteresis loop shifted from a zero magnetic field has been found to occur at a temperature below 40 K. A theoretical model is proposed that implies the coexistence of ferromagnetically and antiferromagnetically ordered regions within the GaAs layers.

引用

页码：164 / 169

页数：6

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