Origin of the Planar Hall Effect in Nanocrystalline Co60Fe20B20

被引：64

作者：

Seemann, K. M. ^{[1
,2
]}

Freimuth, F. ^{[2
,3
]}

Zhang, H. ^{[2
,3
]}

Bluegel, S. ^{[2
,3
]}

Mokrousov, Y. ^{[2
,3
]}

Buergler, D. E. ^{[1
,2
]}

Schneider, C. M. ^{[1
,2
]}

机构：

[1] Forschungszentrum Julich, Peter Grunberg Inst PGI 6, D-52425 Julich, Germany

[2] Forschungszentrum Julich, Julich Aachen Res Alliance JARA FIT, D-52425 Julich, Germany

[3] Forschungszentrum Julich, Peter Grunberg Inst PGI 1, Inst Adv Simulat, D-52425 Julich, Germany

来源：

PHYSICAL REVIEW LETTERS | 2011年 / 107卷 / 08期

关键词：

THIN; ANISOTROPY;

D O I：

10.1103/PhysRevLett.107.086603

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

An angle dependent analysis of the planar Hall effect (PHE) in nanocrystalline single-domain Co60Fe20B20 thin films is reported. In a combined experimental and theoretical study we show that the transverse resistivity of the PHE is entirely driven by anisotropic magnetoresistance (AMR). Our results for Co60Fe20B20 obtained from first principles theory in conjunction with a Boltzmann transport model take into account the nanocrystallinity and the presence of 20 at.% boron. The ab initio AMR ratio of 0.12% agrees well with the experimental value of 0.22%. Furthermore, we experimentally demonstrate that the anomalous Hall effect contributes negligibly in the present case.

引用

页数：4

共 25 条

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