Atomic Interfacial Structures in Fe/GaAs Films

被引：1
|
作者：
Fleet, L. R. [2 ]
Kobayashi, H. [3 ]
Ohno, Y. [3 ]
Hirohata, A. [1 ,4 ]
机构：
[1] Univ York, Dept Elect, York YO10 5DD, N Yorkshire, England
[2] Univ York, Dept Phys, York YO10 5DD, N Yorkshire, England
[3] Tohoku Univ, Elect Commun Res Inst, Sendai, Miyagi 9808577, Japan
[4] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan
来源：
IEEE TRANSACTIONS ON MAGNETICS | 2011年 / 47卷 / 10期
基金：
英国工程与自然科学研究理事会;
关键词：
Fe; GaAs and Schottky barrier; spin-polarized injection; spintronics; INJECTION;
D O I：
10.1109/TMAG.2011.2156388
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We discuss the effect of the atomic interfacial structure on the Schottky barrier height in Fe/GaAs films. HRTEM image simulations, produced using the microscopy software JEMS, were used to predict the interfacial structure of Fe/GaAs thin films. Comparisons between experimental images, obtained using a JEOL FS2200 microscope, and the image simulations show the interfaces to contain various structures. This leads to regions with different barrier properties giving a distribution of barrier heights. This would create preferential regions for tunnelling across the film which would dominate device characteristics.
引用
收藏
页码：2756 / 2759
页数：4
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