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Sub-surface microstructural investigation for establishing micro-mechanisms of wear in sliding of SiC and SiC-WC ceramics
被引:0
|作者:
Sharma, Sandan Kumar
[1
,2
]
Gurnani, Luv
[3
]
Jangid, Manoj K.
[3
]
Krishna, K. V. Mani
[4
]
Mukhopadhyay, Amartya
[3
]
Kim, Young-Wook
[5
]
Kumar, B. Venkata Manoj
[1
]
机构:
[1] Indian Inst Technol IIT Roorkee, Dept Met & Mat Engn, TriboCeram Lab, Roorkee, Uttar Pradesh, India
[2] Punjab Engn Coll, Dept Met & Mat Engn, Chandigarh, India
[3] Indian Inst Technol IIT Bombay, Dept Met Engn & Mat Sci, High Temp & Energy Mat Lab, Mumbai, Maharashtra, India
[4] Bhabha Atom Res Ctr, Mat Sci Div, Mumbai, Maharashtra, India
[5] Univ Seoul, Dept Mat Sci & Engn, Funct Ceram Lab, Seoul, South Korea
来源:
基金:
新加坡国家研究基金会;
关键词:
Silicon carbide;
Tungsten carbide;
Sub-surface;
Microstructure;
Dislocation/twin;
Sliding wear;
SILICON-CARBIDE;
BEHAVIOR;
DAMAGE;
DEFORMATION;
FRICTION;
ALUMINA;
FRACTURE;
TESTS;
DRY;
TEM;
D O I:
10.1016/j.wear.2022.204236
中图分类号:
TH [机械、仪表工业];
学科分类号:
0802 ;
摘要:
Dual-beam FIB/FEG-SEM and TEM/HRTEM observations of sub-surfaces of SiC and SiC-50 wt% WC composite disks worn against SiC ball have provided important insights into the micro-mechanisms of material removal and the role of WC towards suppressing the same. Sub-surface analysis reveals the silicon oxide rich tribochemical layer just underneath the worn surfaces of monolithic SiC. Further below this tribochemical layer, dislocations and twins in SiC grains, as well as micro-cracks, are identified. Micro-cracks get extended up to similar to 2 mu m depth below the layer, eventually leading to material removal in SiC ceramics. In case of the SiC-WC composite, neither is the tribochemical layer dominant, nor is twin/dislocation networks seen to extend beyond the SiC/WC interfaces. Overall, the present study highlights that WC particulate reinforcements in SiC-WC composite minimize the wear damage by suppressing oxidative wear and restricting the generation of micro-cracks, which otherwise form extensively due to stress build-up at the tips of dislocations or twins in SiC grains.
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页数:9
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