Dielectric function and double absorption onset of monoclinic Cu2SnS3: Origin of experimental features explained by first-principles calculations

被引:58
作者
Crovetto, Andrea [1 ]
Chen, Rongzhen [2 ]
Ettlinger, Rebecca Bolt [3 ]
Cazzaniga, Andrea Carlo [3 ]
Schou, Jorgen [3 ]
Persson, Clas [2 ,4 ]
Hansen, Ole [1 ,5 ]
机构
[1] Tech Univ Denmark, DTU Nanotech, DK-2800 Lyngby, Denmark
[2] Royal Inst Technol, Dept Mat Sci & Engn, SE-10044 Stockholm, Sweden
[3] Tech Univ Denmark, DTU Foton, DK-4000 Roskilde, Denmark
[4] Univ Oslo, Dept Phys, POB 1048 Blindern, NO-0316 Oslo, Norway
[5] Tech Univ Denmark, Ctr Individual Nanoparticle Funct, DK-2800 Lyngby, Denmark
基金
新加坡国家研究基金会;
关键词
CTS; Cu2SnS3; Optical properties; Band gap; Ellipsometry; OPTICAL-PROPERTIES; THIN-FILM; SULFURIZATION;
D O I
10.1016/j.solmat.2016.04.028
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
In this work, we determine experimentally the dielectric function of monoclinic Cu2SnS3 (CTS) by spectroscopic ellipsometry from 0.7 to 5.9 eV. An experimental approach is proposed to overcome the challenges of extracting the dielectric function of Cu2SnS3 when grown on a glass/Mo substrate, as relevant for photovoltaic applications. The ellipsometry measurement reveals a double absorption onset at 0.91 eV and 0.99 eV. Importantly, we demonstrate that calculation within the density functional theory (DFT) confirms this double onset only when a very dense k-mesh is used to reveal fine details in the electronic structure, and this can explain why it has not been reported in earlier calculated spectra. We can now show that the double onset originates from optical transitions at the Gamma-point from three energetically close-lying valence bands to a single conduction band. Thus, structural imperfection, like secondary phases, is not needed to explain such an absorption spectrum. Finally, we show that the absorption coefficient of CTS is particularly large in the near-band gap spectral region when compared to similar photovoltaic materials. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:121 / 129
页数:9
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