Thermal Management for Flip-chip High Power Amplifiers utilizing Carbon Nanotube Bumps

被引:0
作者
Soga, Ikuo [1 ]
Kondo, Daiyu [1 ]
Yamaguchi, Yoshitaka [1 ]
Iwai, Taisuke [1 ,2 ]
Kikkawa, Toshihide [2 ]
Joshin, Kazukiyo [2 ]
机构
[1] Fujitsu Labs Ltd, Nanoelect Res Ctr, 10-1 Morinosato Wakamiya, Kanagawa 2430197, Japan
[2] Fujitsu Labs Ltd, Cpds Semicond Device Lab, Kanagawa 2430197, Japan
来源
2009 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT 2009) | 2009年
关键词
Carbon nanotubes; high power amplifiers; flip-chip; GaN; HEMT;
D O I
暂无
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
Carbon nanotubes (CNTs) have been successfully used as source bumps for flip-chip high power amplifiers (HPAs). We have fabricated fine pitch CNT bumps with metal coating, which have been connected to electrodes close to the active areas of AlGaN/GaN HEMTs. A flip-chip AlGaN/GaN HEMT HPA with a gate width of 28.8 mm utilizing CNT bumps and an operating voltage of 50 V exhibits an output power of 49.3 dBm at a frequency of 2.4 GHz.
引用
收藏
页码:100 / +
页数:2
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