Study of the formation processes of gold droplet arrays on Si substrates by high temperature anneals

被引：7
|
作者：
Klimovskaya, Alla [1 ]
Sarikov, Andrey [1 ]
Pedchenko, Yury [1 ]
Voroshchenko, Andrey [1 ]
Lytvyn, Oksana [1 ]
Stadnik, Alexandr [1 ]
机构：
[1] Natl Acad Sci Ukraine, V Lashkarev Inst Semicond Phys, UA-03028 Kiev, Ukraine
来源：
NANOSCALE RESEARCH LETTERS | 2011年 / 6卷
关键词：
CHEMICAL-VAPOR-DEPOSITION; SILICON NANOWIRES; GROWTH; AU; NANOTUBES;
D O I：
10.1186/1556-276X-6-151
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this study, the peculiarities of the transformations of gold films deposited on the Si wafer surfaces as a result of high temperature anneals are investigated experimentally depending on the conditions of wafer surface preparation and the annealing regimes. The morphology and the distribution functions of the crystallites of gold films as well as the gold droplets formed as a result of anneals are studied as functions of annealing temperature, type of annealing (rapid thermal or rapid furnace annealing), and the state of the surface of Si wafers. The results obtained can be used for the controlled preparation of the arrays of catalytic gold droplets for subsequent growth of Si wire-like crystals.
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页数：8
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