Unipolar Resistive Switching Properties of Diamondlike Carbon-Based RRAM Devices

被引：44

作者：

Fu, Di ^{[1
]}

Xie, Dan ^{[1
]}

Feng, Tingting ^{[1
]}

Zhang, Chenhui ^{[2
]}

Niu, Jiebin ^{[3
]}

Qian, He ^{[1
]}

Liu, Litian ^{[1
]}

机构：

[1] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China

[2] Tsinghua Univ, State Key Lab Tribol, Beijing 100084, Peoples R China

[3] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 06期

基金：

中国国家自然科学基金;

关键词：

Diamondlike carbon (DLC); resistance random access memory (RRAM); unipolar resistive switching; AMORPHOUS-CARBON; PROSPECTS;

D O I：

10.1109/LED.2011.2132750

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Resistance random access memory devices based on nanoscale diamondlike carbon (DLC) films are demonstrated. The devices exhibit excellent memory performances such as high on/off-resistance ratio (> 300), high switching speed (< 50 ns), low operation voltage (< 1.2 V), low switching power consumption (< 16 mu W), nondestructive readout, and good reliability. Nanoscale graphitic filament formation and rupture alternately through the field-induced dielectric breakdown and thermal fuse effect, respectively, are proposed to be responsible for the resistance switching. The unipolar switching characteristics shown here suggest that DLC is one of the most promising material candidates for high-density and low-power nonvolatile memory applications.

引用

页码：803 / 805

页数：3

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