Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region

被引：104

作者：

Nishida, T ^{[1
]}

Saito, H ^{[1
]}

Kobayashi, N ^{[1
]}

机构：

[1] NTT Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 25期

关键词：

D O I：

10.1063/1.1377854

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By introducing a single-quantum-well active layer and a high-Al-content carrier blocking layer, the output power of an AlGaN-based ultraviolet light-emitting diode has been improved by one order of magnitude. Optical output of 1 mW was achieved at the emission peak wavelength of 341-343 nm. (C) 2001 American Institute of Physics.

引用

页码：3927 / 3928

页数：2

共 7 条

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