Current stressing-induced growth of Cu3Sn in Cu/Sn/Cu solder joints

被引：16

作者：

Chen, Delphic ^{[1
]}

Ho, Cheng-En ^{[2
]}

Kuo, Jui-Chao ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 701, Taiwan

[2] Yuan Ze Univ, Dept Chem Engn & Mat Sci, Tao Yuan 320, Taiwan

来源：

MATERIALS LETTERS | 2011年 / 65卷 / 09期

关键词：

EBSD; CuSn; Electromigration; EUTECTIC SNPB; CU; BEHAVIOR;

D O I：

10.1016/j.matlet.2011.01.048

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated the influence of current stressing on a crystallographic microstructure of intermetallics in Cu/Sn/Cu solder joints using electron backscatter diffraction (EBSD). After direct current (DC) stressing at 150 degrees C for 10 d, the total Sn of the Cu/Sn/Cu was converted into a tri-layer structure of Cu3Sn/Cu6Sn5/Cu3Sn. The Cu3Sn layers that grew on the cathode and anode are asymmetrical during DC stressing. A preferred direction < 010 > Cu3Sn along the current direction on the anode was found after current stressing. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1276 / 1279

页数：4

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