A+25-dBm IIP3 1.7-2.1-GHz FDD Receiver Front End With Integrated Hybrid Transformer in 28-nm CMOS

被引:24
作者
Fabiano, Ivan [1 ,2 ]
Ramella, Matteo [1 ,3 ]
Manstretta, Danilo [1 ]
Castello, Rinaldo [1 ]
机构
[1] Univ Pavia, Dept Elect Comp & Biomed Engn, I-27100 Pavia, Italy
[2] Silicon Mitus, I-27100 Pavia, Italy
[3] Adv Circuit Pursuit, CH-8008 Zurich, Switzerland
关键词
Blocker tolerant; cellular communications; current mode; direct conversion; duplexers; 5G; frequency-division duplexing (FDD); isolation; local thermal equilibrium (LTE); low power; surface acoustic wave (SAW)-less; 3G; tunable circuits; NOISE; DUPLEXER; TDD;
D O I
10.1109/TMTT.2017.2742480
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A highly linear receiver (RX) front end with integrated hybrid transformer (HT) for frequency-division duplexing mobile communications is reported. The HT, implemented with a three-winding coplanar transformer, is used to interface the RX front end with the antenna and the power amplifier. The primary is driven at its center tap with the transmitted signal and at one input with the antenna signal, while the other input is connected to an on-chip programmable balancing impedance. The two secondary drives a differential push-pull common-gate low-noise amplifier (LNA). Assuming a perfectly linear hybrid only 45 dB of transmitter (TX)-RX isolation and 35 dB of common-mode rejection are required to meet the intermodulation specs thanks to the +25-dBm receiver IIP3. This would drastically simplify hybrid balancing and adaptation loop. Cascaded noise figure of duplexer, LNA, and baseband is below 6.7 dB and TX insertion loss below 4.3 dB from 1.7 to 2.1 GHz. The implemented prototype in 28-nm CMOS has an active area of 0.7 mm(2) and requires only 26 mW.
引用
收藏
页码:4677 / 4688
页数:12
相关论文
共 30 条
[1]   Tunable CMOS Integrated Duplexer With Antenna Impedance Tracking and High Isolation in the Transmit and Receive Bands [J].
Abdelhalem, Sherif H. ;
Gudem, Prasad S. ;
Larson, Lawrence E. .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2014, 62 (09) :2092-2104
[2]   Hybrid Transformer-Based Tunable Differential Duplexer in a 90-nm CMOS Process [J].
Abdelhalem, Sherif H. ;
Gudem, Prasad S. ;
Larson, Lawrence E. .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2013, 61 (03) :1316-1326
[3]  
[Anonymous], 2013, 25101 ETSI TS
[4]  
[Anonymous], 2014, 36101 ETSI TS
[5]  
[Anonymous], P IEEE AS SOL STAT C
[6]  
Castellano G, 2016, IEEE I C ELECT CIRC, P328, DOI 10.1109/ICECS.2016.7841199
[7]   A highly linear broadband CMOS LNA employing noise and distortion cancellation [J].
Chen, Wei-Hung ;
Liu, Gang ;
Zdravko, Boos ;
Niknejad, Ali M. .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2008, 43 (05) :1164-1176
[8]   Highly Integrated and Tunable RF Front Ends for Reconfigurable Multiband Transceivers: A Tutorial [J].
Darabi, Hooman ;
Mirzaei, Ahmad ;
Mikhemar, Mohyee .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2011, 58 (09) :2038-2050
[9]   Low-Loss Integrated Passive CMOS Electrical Balance Duplexers With Single-Ended LNA [J].
Elkholy, Mohamed ;
Mikhemar, Mohyee ;
Darabi, Hooman ;
Entesari, Kamran .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2016, 64 (05) :1544-1559
[10]   SAW-Less Analog Front-End Receivers for TDD and FDD [J].
Fabiano, Ivan ;
Sosio, Marco ;
Liscidini, Antonio ;
Castello, Rinaldo .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2013, 48 (12) :3067-3079