Growth and composition of dual-plasma polymer-like amorphous carbon films

被引:36
作者
Godet, C [1 ]
Heitz, T
Bouree, JE
Drevillon, B
Clerc, C
机构
[1] Ecole Polytech, Phys Interfaces & Couches Minces Lab, CNRS, UMR 7647, F-91128 Palaiseau, France
[2] Univ Paris 11, Ctr Spectrometrie Nucl & Spectrometrie Masse, F-91405 Orsay, France
关键词
D O I
10.1063/1.368570
中图分类号
O59 [应用物理学];
学科分类号
摘要
Polymer-like hydrogenated amorphous carbon (a-C:H) films have been grown in a dual-plasma [radio frequency (rf)-microwave (MW)] reactor using butane as a carbon precursor and different mixtures (H-2-Ar or He-Ar) in the MW plasma in order to vary the atomic hydrogen flux impinging on the growing film. Decreasing the rf power (i.e., the energy of ion bombardment on a-C:H) or increasing the H atom flux both result in a wide band gap H-rich polymer-like a-C:H network. Nuclear techniques have been combined with UV-visible ellipsometry to determine the stoichiometry, density and growth rate of a-C:H films as a function of the plasma parameters. Parametrization of UV-visible optical properties allows to monitor the changes in the optical parameters (optical gap and density of pi states) attributed to the formation of structural units containing C=C double bonds. C-H bonds observed by in situ infrared ellipsometry have been used to investigate the role of ions in the growth processes (densification, cross linking) and to interpret the observed changes in optical parameters in terms of a two-phase microscopic description of polymer-like a-C:H. In order to understand the kinetic results, a phenomenological growth model is proposed including the respective roles of ion bombardment and H atom flux in the activation and deactivation of surface sites available for CxHy radical incorporation (chemisorption) to the growth zone. The activation mechanism corresponds to a chemical modification at the growth zone sites. This adlayer model includes the physisorption of both H atoms and CxHy radicals and explains why the temperature dependence of the deposition rate is found to be opposite for the limiting cases of low and high H atom fluxes. Some consequences of the model on the film stoichiometry (H/C ratio) and microstructure (sp(2) C/sp(3) C ratio) have also been evaluated. (C) 1998 American Institute of Physics. [S0021-8979(98)02419-0].
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页码:3919 / 3932
页数:14
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