Representation of strained gate-all-around junctionless tunneling nanowire filed effect transistor for analog applications

被引:21
作者
Abadi, Rouzbeh Molaei Imen [1 ]
Ziabari, Seyed Ali Sedigh [1 ]
机构
[1] Islamic Azad Univ, Rasht Branch, Dept Elect Engn, Rasht, Iran
关键词
Junctionless tunnel field effect transistor; Strain; Band-to-band tunneling; Cut-off-frequency; SILICON;
D O I
10.1016/j.mee.2016.04.016
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we investigated gate-all-around silicon nanowire (NW)-based junctionless tunnel field effect transistor (FET) which is called junctionless tunnel NWPEI (JL-TNWFET) with the impact of variation of amount of uniaxial tensile strain on band-to-band tunneling (BTBT) injection and electrical characteristics. The tunneling model is first calculated for measurements of gate-controlled BTBT in the JL-TNWI-EI and is compared with the strained JL-TNWFET with similar technology parameters. The simulation results show that the JL-TNWFET have potential for low-operating-voltage application (V-dd $_amp_$lt; 0.4 V) and represent high I-ON/I-OFF ratio and steep subthreshold swing over many decade while encompassing high ON-state currents. Whereas, the strained JL-TNWFET due to thinner tunneling barrier at the source-channel junction which leads to the increase of carrier tunneling rate shows excellent characteristics with high ON-current, superior transconductance (g(m)) and cut-off frequency (f(T)). (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:12 / 16
页数:5
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