Properties of bulk AlN grown by thermodecomposition of AlCl3•NH3

被引:22
作者
Freitas, JA [1 ]
Braga, GCB
Silveira, E
Tischler, JG
Fatemi, M
机构
[1] USN, Res Lab, ESTD, Washington, DC 20375 USA
[2] Univ Brasilia, Inst Fis, BR-70000 Brasilia, DF, Brazil
[3] Univ Fed Parana, Dept Fis, BR-81531990 Curitiba, Parana, Brazil
关键词
D O I
10.1063/1.1614418
中图分类号
O59 [应用物理学];
学科分类号
摘要
Self-nucleated bulk AlN crystals were grown by thermodecomposition of AlCl3.NH3 vaporized in the low-temperature zone of a two-zone furnace. X-ray diffraction of the AlN crystals show single lines with a small linewidth indicating high single-crystalline quality. Polarized Raman scattering experiments of these samples confirm the x-ray results based on the detection of a small linewidth for all allowed optical phonons. Low-temperature cathodoluminescence spectra show very sharp emission bands close to the optical band gap, which have been assigned to free-excitons A and B, and exciton-bound to shallow neutral impurity. The latter has a full width at half maximum smaller than 1.0 meV. (C) 2003 American Institute of Physics.
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收藏
页码:2584 / 2586
页数:3
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