Synthesis of taperlike Si nanowires with strong field emission

被引：74
|
作者：
Chueh, YL [1 ]
Chou, LJ [1 ]
Cheng, SL [1 ]
He, JH [1 ]
Wu, WW [1 ]
Chen, LJ [1 ]
机构：
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 13期
关键词：
D O I：
10.1063/1.1883316
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Taperlike Si nanowires (SiNWs) have been synthesized by annealing of high-density FeSi2 nanodots on (001)Si at 1200 degrees C in a N-2 ambient. The tip regions of SiNWs are about 5 - 10 nm in diameter. The average length of the SiNWs is about 6 mu m with aspect ratios as high as 150-170. A growth model based on oxide-assisted growth is proposed. The taperlike morphology may be caused by the passivation of the SiO2 coating layer, which results in the different levels of absorption of SiO along the length of the nanowires. The SiNWs exhibit a turn-on field of 6.3-7.3 V/mu m and a threshold field of 9-10 V/mu m. The excellent field emission characteristics are attributed to the taperlike geometry of the crystalline Si nanowires. (C) 2005 American. Institute of Physics.
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页码：1 / 3
页数：3
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