On the growth mechanism of a-Si:H

被引：77

作者：

Kessels, WMM

Smets, AHM

Marra, DC

Aydil, ES

Schram, DC

van de Sanden, MCM

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

[2] Univ Calif Santa Barbara, Dept Chem Engn, Santa Barbara, CA 93106 USA

来源：

THIN SOLID FILMS | 2001年 / 383卷 / 1-2期

关键词：

a-Si : H; growth model; SiH3; radicals; surface reactions; H elimination;

D O I：

10.1016/S0040-6090(00)01594-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The kinetic growth model for hydrogenated amorphous silicon (a-Si:H) from SiH4 radicals in SiH4 plasmas is reviewed on the basis of recently obtained experimental and computational data. New surface reactions are considered and their implications for the a-Si:H film growth mechanism are discussed. Furthermore, from the experimentally observed substrate temperature-dependence of the bulk hydrogen content and the composition of the a-Si:H surface hydrides, it is concluded that surface processes play an important role in hydrogen elimination from the him during growth. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：154 / 160

页数：7

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