On the growth mechanism of a-Si:H

被引：77
作者：
Kessels, WMM
Smets, AHM
Marra, DC
Aydil, ES
Schram, DC
van de Sanden, MCM
机构：
[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
[2] Univ Calif Santa Barbara, Dept Chem Engn, Santa Barbara, CA 93106 USA
来源：
THIN SOLID FILMS | 2001年 / 383卷 / 1-2期
关键词：
a-Si : H; growth model; SiH3; radicals; surface reactions; H elimination;
D O I：
10.1016/S0040-6090(00)01594-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The kinetic growth model for hydrogenated amorphous silicon (a-Si:H) from SiH4 radicals in SiH4 plasmas is reviewed on the basis of recently obtained experimental and computational data. New surface reactions are considered and their implications for the a-Si:H film growth mechanism are discussed. Furthermore, from the experimentally observed substrate temperature-dependence of the bulk hydrogen content and the composition of the a-Si:H surface hydrides, it is concluded that surface processes play an important role in hydrogen elimination from the him during growth. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：154 / 160
页数：7
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