Self-assembly of one-dimensional nanostructures at silicon surfaces

被引:74
作者
Himpsel, FJ [1 ]
Kirakosian, A [1 ]
Crain, JN [1 ]
Lin, JL [1 ]
Petrovykh, DY [1 ]
机构
[1] Univ Wisconsin, Dept Phys, Madison, WI 53706 USA
基金
美国国家科学基金会;
关键词
nanostructures; quantum wells; surfaces and interfaces; nanofabrications; scanning tunnelling microscopy;
D O I
10.1016/S0038-1098(00)00441-5
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Nanostructures at surfaces and interfaces are a fertile testing ground for bringing the idea of 'tailored solids' towards reality. Electronic properties can be controlled systematically by confinement or by interface effects. The presence of a single crystal substrate allows for the self-assembly of highly regular nanoobjects, such as stripes and strings of dots with sizes of about 10 nm. Using silicon as substrate facilitates the electronic integration of nanodevices into micro-electronics. We speculate how such structures might evolve into future devices, such as data storage arrays with densities of Terabits/cm(2) and self-assembled, highly parallel data processors for pattern recognition. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:149 / 157
页数:9
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