New electrodeposition technique for controlling depth profile of CuInSe2 thin films for solar cell application

It is known that the efficiency of CuInSe2 (CIS)-based solar cells can be improved using a CIS layer with a composition that can be modulated to be In-rich near the pn junction interface. In this work, a new electrodeposition technique for preparing CIS thin films with a controlled composition depth profile was developed. CIS thin films having a bilayer structure, that is, with the Cu-rich and In-rich layers, were successfully deposited from one electrolyte only by changing the substrate potential during electrodeposition.