New electrodeposition technique for controlling depth profile of CuInSe2 thin films for solar cell application

被引：4
|
作者：
Nakamura, S [1 ]
机构：
[1] Tsuyama Natl Coll Technol, Okayama 7088509, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 4A期
关键词：
CuInSe2; thin film solar cells; electrodeposition; bi-layer" method; composition depth profile;
D O I：
10.1143/JJAP.44.1939
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
It is known that the efficiency of CuInSe2 (CIS)-based solar cells can be improved using a CIS layer with a composition that can be modulated to be In-rich near the pn junction interface. In this work, a new electrodeposition technique for preparing CIS thin films with a controlled composition depth profile was developed. CIS thin films having a bilayer structure, that is, with the Cu-rich and In-rich layers, were successfully deposited from one electrolyte only by changing the substrate potential during electrodeposition.
引用
收藏
页码：1939 / 1940
页数：2
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