Selective oxidation of buried AlGaAs versus AlAs layers

被引：73

作者：

Choquette, KD ^{[1
]}

Geib, KM ^{[1
]}

Chui, HC ^{[1
]}

Hammons, BE ^{[1
]}

Hou, HQ ^{[1
]}

Drummond, TJ ^{[1
]}

机构：

[1] UNIV VIRGINIA,DEPT MAT SCI,CHARLOTTESVILLE,VA 22903

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 10期

关键词：

D O I：

10.1063/1.117589

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report significant differences between the properties of buried oxides converted from AlGaAs and AlAs layers using selective wet oxidation. Layers of AlxGa1-xAs with x greater than or equal to 0.96 exhibit crystallographic dependent oxidation rates, while for layers with x less than or equal to 0.92 the oxidation rate is isotropic. Mesas containing partially oxidized layers of AlAs are unstable to rapid thermal cycling and exhibit excessive strain at the oxide terminus, while mesas containing partially oxidized layers of AlGaAs are robust and lack evidence of strain, Finally, the oxidation of AlGaAs layers, rather than AlAs, is found to provide robust oxide apertures for reliable vertical-cavity surface emitting lasers. (C) 1996 American Institute of Physics.

引用

页码：1385 / 1387

页数：3

共 17 条

[1] ALXGA1-XAS-GAAS METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FORMED BY LATERAL WATER-VAPOR OXIDATION OF ALAS [J].