The Effect of Quantum Dot Shape and Position on Electron Confinement in Dot-in-a-Well Structures

被引：0
|
作者：
Batenipour, N. [1 ]
Saghafi, K. [2 ]
Moravvej-Farshi, M. K. [3 ]
机构：
[1] Islamic Azad Univ, Dept Elect Engn, Sci & Res Branch, Tehran, Iran
[2] Shahed Univ, Dept Elect Engn, Tehran, Iran
[3] Tarbiat Modares Univ, Dept Elect & Comp Engn, Tehran, Iran
来源：
INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2 | 2010年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we present results of our study on electron confinement in dot-in-a-well (DWELL) structures. The structures under investigation consist of an In As quantum dot (QD) confined in an In GaAs quantum well (QW), which in turn buried in GaAs bulk. We examine DWELL structures of various quantum dot shapes embedded in the same quantum well and calculate their electronic structures. We perform our simulation using path integral Monte Carlo (PIMC) method with virial energy estimator. Our simulation results reveal that electron confinement in DWELL structures strongly depends on QD shape as well as its relative location inside the well.
引用
收藏
页码：1153 / +
页数：2
相关论文
共 50 条
  • [41] Electron interaction in a quantum dot with hard wall confinement potential
    Matulis, A
    Fjaerestad, JO
    Chao, KA
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 1997, 11 (08): : 1035 - 1049
  • [42] Comparative investigation of quantum-dot-like localization centers in InGaN quantum well and quantum dot structures
    Sebald, K.
    Lohmeyer, H.
    Gutowski, J.
    Yamaguchi, T.
    Hommel, D.
    GAN, AIN, INN AND RELATED MATERIALS, 2006, 892 : 645 - +
  • [43] Semiconductor Optical Amplifier Based on a Quantum Dot-in-a-Well (QDWELL) Structure Under Optical Pumping
    Ben Ezra, Yosef
    Lembrikov, Boris I.
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2014, 50 (05) : 340 - 347
  • [44] Nonlinear Optical Phenomena in Semiconductor Optical Amplifier Based on a Quantum Dot-in-a-Well (QDWELL) Structure
    Lembrikov, B. I.
    Ben Ezra, Y.
    2013 15TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON 2013), 2013,
  • [45] Highly efficient InAs/InGaAs quantum dot-in-a-well heterostructure validated with theoretically simulated model
    Ghadi, H.
    Dubey, S.
    Singh, P. K.
    Bhatt, M.
    Chakrabarti, S.
    QUANTUM DOTS AND NANOSTRUCTURES: GROWTH, CHARACTERIZATION, AND MODELING XV, 2018, 10543
  • [46] InAs quantum dot-in-a-well heterostructures with InGaAs, GaAsN and GaAsSb well using digital alloy capping layer
    Kumar, Ravindra
    Saha, Jhuma
    Tongbram, Binita
    Panda, Debiprasad
    Gourishetty, Raveesh
    Kumar, Ravinder
    Gazi, Sanowar Alam
    Chakrabarti, Subhananda
    CURRENT APPLIED PHYSICS, 2023, 47 : 72 - 82
  • [47] Effects of the well layer on the emission wavelength of InAs/InGaAs dot-in-a-well structure
    Kim, J.
    Yang, C. J.
    Sim, U.
    Yoon, E.
    Lee, Y.
    Choi, W. J.
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2008, 52 : S34 - S37
  • [48] Quantum confinement effects in Si quantum well and dot structures fabricated from ultrathin Silicon-on-insulator wafers
    Tabe, M
    Kumezawa, M
    Ishikawa, Y
    Mizuno, T
    APPLIED SURFACE SCIENCE, 2001, 175 : 613 - 618
  • [49] Optical properties of electron beam and γ-ray irradiated InGaAs/GaAs quantum well and quantum dot structures
    Aierken, A.
    Guo, Q.
    Huhtio, T.
    Sopanen, M.
    He, Ch F.
    Li, Y. D.
    Wen, L.
    Ren, D. Y.
    RADIATION PHYSICS AND CHEMISTRY, 2013, 83 : 42 - 47
  • [50] Spatially separated excitons in quantum-dot quantum well structures
    Chang, K
    Xia, JB
    PHYSICAL REVIEW B, 1998, 57 (16): : 9780 - 9786
12345