The Effect of Quantum Dot Shape and Position on Electron Confinement in Dot-in-a-Well Structures

被引：0
|
作者：
Batenipour, N. [1 ]
Saghafi, K. [2 ]
Moravvej-Farshi, M. K. [3 ]
机构：
[1] Islamic Azad Univ, Dept Elect Engn, Sci & Res Branch, Tehran, Iran
[2] Shahed Univ, Dept Elect Engn, Tehran, Iran
[3] Tarbiat Modares Univ, Dept Elect & Comp Engn, Tehran, Iran
来源：
INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2 | 2010年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we present results of our study on electron confinement in dot-in-a-well (DWELL) structures. The structures under investigation consist of an In As quantum dot (QD) confined in an In GaAs quantum well (QW), which in turn buried in GaAs bulk. We examine DWELL structures of various quantum dot shapes embedded in the same quantum well and calculate their electronic structures. We perform our simulation using path integral Monte Carlo (PIMC) method with virial energy estimator. Our simulation results reveal that electron confinement in DWELL structures strongly depends on QD shape as well as its relative location inside the well.
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页码：1153 / +
页数：2
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