Current-induced spin orientation in semiconductors and low-dimensional structures

被引：4
|
作者：
Averkiev, N. S. [1 ]
Kokurin, I. A. [1 ,2 ]
机构：
[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] Mordovia State Univ, Inst Phys & Chem, Saransk 430005, Russia
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2017年 / 440卷
关键词：
Semiconductors; Low-dimensional systems; Spin orientation; Spin-orbit coupling; 2-DIMENSIONAL ELECTRON-GAS; INAS NANOWIRES; POLARIZATION; SYSTEM; PHOTOCURRENT; FIELD;
D O I：
10.1016/j.jmmm.2016.12.059
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present here a brief overview of current-induced spin polarization in bulk semiconductors and semiconductor structures of various dimension. The role of band structure and spin relaxation processes is discussed. The related phenomena, such as spin Hall effect, inverse spin Hall effect and other are discussed. Our recent results in this field are presented as well.
引用
收藏
页码：157 / 160
页数：4
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