Modified atomic layer deposition of RuO2 thin films for capacitor electrodes

被引：45

作者：

Kim, Jin-Hyock ^{[1
]}

Kil, Deok-Sin ^{[1
]}

Yeom, Seung-Jin ^{[1
]}

Roh, Jae-Sung ^{[1
]}

Kwak, Noh-Jung ^{[1
]}

Kim, Jin-Woong ^{[1
]}

机构：

[1] Hynix Semicond Inc, Div Res & Dev, Icheon Si 467701, Kyoungki Do, South Korea

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 05期

关键词：

D O I：

10.1063/1.2767769

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors investigated the modified atomic layer deposition (ALD) of RuO2 films using bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)(2)] at a deposition temperature of 265 degrees C. Oxygen gas diluted with argon was supplied throughout all of the ALD steps. The growth rate of the modified ALD RuO2 was about 1.4 angstrom/cycle, which is higher than that of conventional Ru ALD due to the increase in the amount of Ru(EtCp)(2) adsorption per cycle, as well as the difference in the unit cell volumes of Ru and RuO2. The film thickness increased linearly with the number of cycles, and the incubation cycle in the initial stage was negligible. (c) 2007 American Institute of Physics.

引用

页数：3

共 22 条

[1] Atomic layer deposition of ruthenium thin films from Ru(thd)3 and oxygen [J].

Aaltonen, T ;

Ritala, M ;

Arstila, K ;

Keinonen, J ;

Leskelä, M .

CHEMICAL VAPOR DEPOSITION, 2004, 10 (04) :215-219

[2] Reaction mechanism studies on atomic layer deposition of ruthenium and platinum [J].

Aaltonen, T ;

Rahtu, A ;

Ritala, M ;

Leskelä, M .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2003, 6 (09) :C130-C133

[3] Ruthenium thin films grown by atomic layer deposition [J].

Aaltonen, T ;

Alén, P ;

Ritala, M ;

Leskelä, M .

CHEMICAL VAPOR DEPOSITION, 2003, 9 (01) :45-49

[4]

CHOI SM, TECH DIG VLSI S, P64

[5] CHEMICAL VAPOR-DEPOSITION OF RUTHENIUM AND RUTHENIUM DIOXIDE FILMS [J].

GREEN, ML ;

GROSS, ME ;

PAPA, LE ;

SCHNOES, KJ ;

BRASEN, D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) :2677-2685

[6] Characteristics of amorphous Bi2Ti2O7 thin films grown by atomic layer deposition for memory capacitor applications [J].

Hwang, GW ;

Kim, WD ;

Min, YS ;

Hwang, CS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2006, 153 (01) :F20-F26

[7] Rugged metal electrode (RME) for high density memory devices [J].

Joo, JH ;

Kim, WD ;

Jeong, YK ;

Won, SJ ;

Park, SY ;

Yoo, CY ;

Kim, ST ;

Moon, JT .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (8A) :L826-L828

[8] Conformability of ruthenium dioxide films prepared on substrates with capacitor holes by MOCVD and modification by annealing [J].

Kawano, Kazuhisa ;

Kosuge, Hiroaki ;

Oshima, Noriaki ;

Funakubo, Hiroshi .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2006, 9 (11) :C175-C177

[9] Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing [J].

Kim, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (06) :2231-2261

[10] Film growth model of atomic layer deposition for multicomponent thin films [J].

Kim, JH ;

Kim, JY ;

Kang, SW .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (09)

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