Formation of ordered B structure on W(100)

被引：8

作者：

Tuli, Farhana Jesmin ^{[1
]}

Peng, Guansong ^{[1
]}

Hossain, Shahadat ^{[1
,4
]}

Ninomiya, Kakeru ^{[2
]}

Ahmed, Rezwan ^{[1
,5
]}

Nakagawa, Takeshi ^{[1
,3
]}

Mizuno, Seigi ^{[1
,3
]}

机构：

[1] Kyushu Univ, Interdisciplinary Grad Sch Engn Sci, Dept Mol & Mat Sci, 6-1 Kasuga Koen, Kasuga, Fukuoka 8168580, Japan

[2] Tohoku Univ, Int Ctr Synchrotron Radiat Innovat Smart, Aoba Ku, 2-1-1 Katahira, Sendai, Miyagi 9808577, Japan

[3] Kyushu Univ, Fac Engn Sci, Dept Adv Mat Sci & Engn, 6-1 Kasuga Koen, Kasuga, Fukuoka 8168580, Japan

[4] Bangladesh Atom Energy Commiss, Atom Energy Ctr, 1018-A Bayezid Bostami Rd,East Nasirabad, Chattogram 4209, Bangladesh

[5] High Energy Accelerator Res Org KEK, Inst Mat Struct Sci, 1-1 Oho, Tsukuba, Ibaraki 3050801, Japan

来源：

SURFACE SCIENCE | 2021年 / 713卷

关键词：

Low energy diffraction; Scanning tunneling microscopy; Surface structure; Boron; SURFACE-STRUCTURES; TUNGSTEN BORIDES; PHASE; BORON; LEED; TRANSITION; INTERLAYER; MO(100);

D O I：

10.1016/j.susc.2021.121906

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Adsorption of a metalloid, boron (B) on W(100) was investigated using low energy electron diffraction (LEED), X-ray photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM) in ultra-high vacuum (UHV) condition. W(100)-c(2 x 2)-B superstructure was formed by annealing at high temperature (1200 K). The best fit structure obtained from LEED analysis and STM observation manifested that B atom positioned at four-fold hollow site with the coverage of 0.5 ML, forming low B concentrated tungsten boride compound, W2B, on W (100) surface. The W atoms beneath B atoms moved downward to form B-W bonds for stabilizing the surface atoms. XPS confirmed B 1s peak shifting towards lower binding energy compared to pure B 1s, which indicated the charge transfer from W to B. No ordered structures other than c(2 x 2) have been observed with the increase of B, which indicates that B atoms diffuse into bulk, not forming ordered B sheets, due to the low diffusion barrier into bulk by annealing.

引用

页数：6

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