Modeling of metallic carbon-nanotube interconnects for circuit simulations and a comparison with Cu interconnects for scaled technologies

被引：127

作者：

Raychowdhury, A ^{[1
]}

Roy, K ^{[1
]}

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 2006年 / 25卷 / 01期

基金：

美国国家科学基金会;

关键词：

carbon nanotube; interconnect delay; interconnects;

D O I：

10.1109/TCAD.2005.853702

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Semiconducting carbon nanotubes (CNTs) have gained immense popularity as possible successors to silicon as the channel material for ultrahigh-performance field-effect transistors (FETs). On the other hand, their metallic counterparts have often been regarded as ideal interconnects for future technology generations. Owing to their high current densities and increased reliability, metallic single-walled CNTs (SWCNTs) have been subjects of fundamental research, both in theory, as well as experiments. Metallic CNTs have been modeled for radio-frequency (RF) applications using a transmission-line model. In this paper, we present an efficient circuit-compatible RLC model for metallic SWCNTs, and analyze the impact of SWCNTs on the performance of ultrascaled digital very large scale integration (VLSI) design.

引用

页码：58 / 65

页数：8

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