Oxidation of AlGaAs layers for tapered apertures in vertical-cavity lasers

被引：24

作者：

Naone, RL ^{[1
]}

Hegblom, ER ^{[1
]}

Thibeault, BJ ^{[1
]}

Coldren, LA ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 04期

关键词：

vertical cavity surface emitting; oxidation; aluminium;

D O I：

10.1049/el:19970222

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By using step-graded Al compositions of epitaxial AlGaAs, we can form a tapered oxidation front due to the combination of rapid lateral oxidation in a higher Al content layer and slow transverse oxidation into adjacent lower Al content layers. A study of the oxidation behaviour of this epitaxial aperture layer demonstrates the feasibility of tapered dielectric apertures which have been predicted to provide much lower losses in vertical cavity lasers.

引用

页码：300 / 301

页数：2

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