Simulation of soft and hard breakdown of ultra-thin gate oxides

被引：0
|
作者：
Rezaee, Leila [1 ]
Selvakumar, C. R. [1 ]
机构：
[1] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada
来源：
2008 CANADIAN CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING, VOLS 1-4 | 2008年
关键词：
oxide breakdown; reliability; soft breakdown; hard breakdown; percolation; Constant Voltage Stress (CVS) test; phase-transition; critical phenomena;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Based on the theory of percolation, we develop a general model to simulate soft and hard breakdown of gate oxides. In this paper, we model the effect of the constant stress in reliability tests as a constant defect generation rate to simulate the time dependent dielectric breakdown. We show that the soft and hard breakdown are the results of two different natures of phase transitions, critical and quasi-critical, in thick and ultra-thin oxides, respectively.
引用
收藏
页码：1579 / 1582
页数：4
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