Performance analysis of GaN/Si versus GaAs LNAs in 5G mm-wave frontend context

被引：2

作者：

Letailleur, L. ^{[1
]}

Villegas, M. ^{[1
]}

Al Hajjar, A. ^{[2
]}

Kacou, C. Edoua ^{[2
]}

机构：

[1] Univ Gustave Eiffel, CNRS, ESYCOM, F-77454 Marne La Vallee, France

[2] OMMIC SAS, FR-94450 Limeil Brevannes, France

来源：

2022 14TH GLOBAL SYMPOSIUM ON MILLIMETER-WAVES & TERAHERTZ (GSMM 2022) | 2022年

关键词：

Low Noise Amplifier; Millimeter Wave; Integrated Circuit; GaN; GaAs; Receiver; 5G mmWave;

D O I：

10.1109/GSMM53818.2022.9792324

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a comparative performance analysis of LNAs realized in GaAs and GaN/Si technologies in the context of 5G mmWave massive MIMO transceiver. Regardless the choice of architecture for beamforming, a key component of the base station transmitter is the RF frontend. In this paper, we investigate the linear and nonlinear performance in a gain/noise/linearity trade-off for the LNA. The circuits are fabricated using OMMIC technologies and characterized on board over the 24-30 GHz frequency band. Measurements demonstrate that it is interesting to use a GaN in a frontend thanks to its additional advantages in terms of linearity.

引用

页码：9 / 11

页数：3