Traceable calibration of a critical dimension atomic force microscope

被引:24
作者
Dixson, Ronald [1 ]
Orji, Ndubuisi G. [1 ]
McGray, Craig D. [1 ]
Bonevich, John [1 ]
Geist, Jon [1 ]
机构
[1] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA
来源
JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS | 2012年 / 11卷 / 01期
关键词
CD-AFM; metrology; CD; linewidth; standards; calibration; traceability; HRTEM; SCCDRM; CD-AFM; REFERENCE METROLOGY; LINEWIDTH STANDARD; NIST;
D O I
10.1117/1.JMM.11.1.011006
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The National Institute of Standards and Technology (NIST) has a multifaceted program in atomic force microscope (AFM) dimensional metrology. One component of this program, and the focus of this paper, is the use of critical dimension atomic force microscopy (CD-AFM). CD-AFM is a commercially available AFM technology that uses flared tips and two-dimensional surface sensing to scan the sidewalls of near-vertical or even reentrant features. Features of this sort are commonly encountered in semiconductor manufacturing and other nanotechnology industries. NIST has experience in the calibration and characterization of CD-AFM instruments and in the development of uncertainty budgets for typical measurements in semiconductor manufacturing metrology. A third generation CD-AFM was recently installed at NIST. The current performance of this instrument for pitch and height measurements generally supports our relative expanded uncertainty (k = 2) goals in the range of 2.0 x 10(-3) and lower. Additionally, a new generation of the NIST single crystal critical dimension reference material (SCCDRM) project is pushing toward feature widths below 10 nm, with the prospect of CD-AFM tip width calibration having expanded uncertainty (k = 2) below 1 nm. (C) 2012 Society of Photo-Optical Instrumentation Engineers (SPIE). [DOI: 10.1117/1.JMM.11.1.011006]
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页数:7
相关论文
共 30 条
[21]   METHOD FOR IMAGING SIDEWALLS BY ATOMIC-FORCE MICROSCOPY [J].
MARTIN, Y ;
WICKRAMASINGHE, HK .
APPLIED PHYSICS LETTERS, 1994, 64 (19) :2498-2500
[22]   TEM sample preparation and FIB-induced damage [J].
Mayer, Joachim ;
Giannuzzi, Lucille A. ;
Kamino, Takeo ;
Michael, Joseph .
MRS BULLETIN, 2007, 32 (05) :400-407
[23]  
McGray C., 2012, J MICRONANO IN PRESS
[24]  
Meli F., 2001, Proceedings of the euspen. 2nd International Conference, P358
[25]   Progress on implementation of a reference measurement system based on a critical-dimension atomic force microscope [J].
Orji, Ndubuisi G. ;
Dixson, Ronald G. ;
Martinez, Angela ;
Bunday, Benjamin D. ;
Allgair, John A. ;
Vorburger, Theodore V. .
JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2007, 6 (02)
[26]   TEM calibration methods for critical dimension standards [J].
Orji, Ndubuisi G. ;
Dixson, Ronald G. ;
Garcia-Gutierrez, Domingo I. ;
Bunday, Benjamin D. ;
Bishop, Michael ;
Cresswell, Michael W. ;
Allen, Richard A. ;
Allgair, John A. .
METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXI, PTS 1-3, 2007, 6518
[27]   Lithography and other patterning techniques for future electronics [J].
Pease, R. Fabian ;
Chou, Stephen Y. .
PROCEEDINGS OF THE IEEE, 2008, 96 (02) :248-270
[28]   Updated NIST photomask linewidth standard [J].
Potzick, J ;
Pedulla, JM ;
Stocker, M .
METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVII, PTS 1 AND 2, 2003, 5038 :338-349
[29]   Image simulation and surface reconstruction of undercut features in atomic force microscopy [J].
Qian, Xiaoping ;
Villarrubia, John ;
Tian, Fenglei ;
Dixson, Ronald .
METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXI, PTS 1-3, 2007, 6518
[30]  
Taylor B., 1994, NIST TECHNICAL NOTE, V1297