Comparison of the Electrical Properties of ZnO Thin Films on Different Substrates by Pulsed Laser Deposition

被引：4

作者：

Echizen, M. ^{[2
]}

Motoyama, S. ^{[2
]}

Tatsuta, T. ^{[2
]}

Tsuji, O. ^{[2
]}

Katiyar, R. S. ^{[1
]}

Kumar, A. ^{[1
]}

Scott, J. F. ^{[3
]}

机构：

[1] Univ Puerto Rico, Dept Phys, San Juan, PR 00931 USA

[2] Samco Inc, Kyoto 6128443, Japan

[3] Univ Cambridge, Cavendish Lab, Dept Phys, Cambridge CB03 0HE, England

来源：

INTEGRATED FERROELECTRICS | 2012年 / 133卷

关键词：

ZnO thin films; pulsed laser deposition; SiO2/Si(100) substrates; single crystal MgO; MBE GROWTH; DOPED ZNO; TRANSISTOR;

D O I：

10.1080/10584587.2012.660862

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

ZnO thin films were deposited on SiO2/Si(100) and single-crystal MgO substrate using pulsed laser deposition. High-quality ZnO thin films were fabricated on both substrates successfully. Interdigital transducer-shaped Al electrodes were used for measuring electrical properties. Electrical current as a function of voltage, temperature-dependent I-V, and impedance of ZnO thin films were measured. ZnO thin films on MgO substrate show ohmic behavior. On the other hand, ZnO thin films on SiO2/Si(100) substrate show good thermal stability but Schottky-like diode behavior.

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收藏

页码：9 / 14

页数：6

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