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Passively Q-switched and mode-locked erbium-doped fiber lasers based on tellurene nanosheets as saturable absorber
被引:50
|作者:
Zhang, Wenfei
[1
]
Wang, Guomei
[1
]
Xing, Fei
[1
]
Man, Zhongsheng
[1
]
Zhang, Fang
[1
]
Han, Kezhen
[1
]
Zhang, Huanian
[1
,2
]
Fu, Shenggui
[1
]
机构:
[1] Shandong Univ Technol, Sch Phys & Optoelect Engn, Zibo 255000, Peoples R China
[2] Shandong Normal Univ, Sch Phys & Elect, Jinan 250358, Peoples R China
基金:
中国国家自然科学基金;
关键词:
BLACK PHOSPHORUS;
PULSE GENERATION;
QUANTUM DOTS;
GRAPHENE;
LOCKING;
CVD-BI2SE3;
DISULFIDE;
MODULATOR;
WS2;
D O I:
10.1364/OE.392944
中图分类号:
O43 [光学];
学科分类号:
070207 ;
0803 ;
摘要:
Various two-dimensional (2D) materials show unique optical properties and excellent performance in acting as saturable absorber (SA) for demonstrating all-fiber ultra-fast lasers. Tellurene, as a new-fashioned few-layer 2D monoelemental material, was designed as an excellent saturable absorber to achieve Q-switched and mode-locked operations within erbium-doped fiber (EDF) lasers in our experiment. High-quality tellurene-based SA with a modulation depth of 0.97% was obtained by blending few-layer tellurene nanosheet solution prepared by liquid phase exfoliation method and the polyvinyl alcohol (PVA) solution. Inserting the SA into the EDF laser cavity by sandwiching the tellurene-PVA film between two fiber ferrules, either the passively Q-switched or the passively mode-locked operations can be obtained. The repetition rate varies from 15.92 to 47.61 kHz, and the pulse duration decreases from 8.915 to 5.196 us in the passively Q-switched operation. To the best of our knowledge, this is the first demonstration focusing on the modulation application of tellurene in designing Q-switched pulsed laser operations. Additionally, mode-locked operations were also achieved by adjusting the polarization state. The obtained results fully indicate that tellurene can he developed as an efficient SA for pulsed fiber lasers. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
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页码:14729 / 14739
页数:11
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