The optical and electrical studies of hydrogen passivation in GaInP/GaAs heterostructures

被引：5
作者：
Fan, JC [1 ]
Wang, JC [1 ]
Chen, YF [1 ]
机构：
[1] Natl Taiwan Univ, Dept Phys, Taipei, Taiwan
来源：
APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 10期
关键词：
D O I：
10.1063/1.123582
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
It is shown that hydrogen passivation by the photochemical vapor deposition method can have a significant influence on GaInP/GaAs heterostructures. The effect has been investigated by low-temperature photoluminescence and current-voltage and capacitance-voltage experiments. The photoluminescence measurement shows a strong increase in the luminescence intensity after hydrogenation. It is interpreted in terms of the passivation of nonradiative recombination defect centers by atomic hydrogen. The effect is also accompanied by a simultaneous decrease in the carrier concentration as shown from the capacitance-voltage measurements. In addition, the effect of hydrogenation is confirmed by the improvement of the Schottky-diode properties. These results provide concrete evidence to support the passivation of impurities and defects by atomic hydrogen in GaInP/GaAs heterostructures. (C) 1999 American Institute of Physics. [S0003-6951(99)04310-7].
引用
收藏
页码：1463 / 1465
页数：3
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