Annealing-Induced Effects on the Chemical Structure of the In2S3/Culn(S,Se)2 Thin-Film Solar Cell Interface

被引：19

作者：

Hauschild, D. ^{[1
]}

Meyer, F. ^{[1
]}

Benkert, A. ^{[1
,2
]}

Kreikemeyer-Lorenzo, D. ^{[2
]}

Pohlner, S. ^{[3
]}

Palm, J. ^{[3
]}

Blum, M. ^{[4
]}

Yang, W. ^{[5
]}

Wilks, R. G. ^{[6
]}

Baer, M. ^{[6
,7
]}

Heske, C. ^{[2
,4
,8
,9
]}

Weinhardt, L. ^{[2
,4
,8
,9
]}

Reinert, F. ^{[1
,10
]}

机构：

[1] Univ Wurzburg, Expt Phys 7, D-97074 Wurzburg, Germany

[2] KIT, Inst Photon Sci & Synchrotron Radiat, D-76344 Eggenstein Leopoldshafen, Germany

[3] AVANCIS GmbH, D-81739 Munich, Germany

[4] Univ Nevada, Dept Chem, Las Vegas UNLV, Las Vegas, NV 89154 USA

[5] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA

[6] Helmholtz Zentrum Berlin Mat & Energie GmbH, Renewable Energy, D-14109 Berlin, Germany

[7] Brandenburg Tech Univ Cottbus Senftenberg, Inst Phys & Chem, D-03046 Cottbus, Germany

[8] KIT, Inst Chem Technol & Polymer Chem, D-76128 Karlsruhe, Germany

[9] KIT, ANKA Synchrotron Radiat Facil, D-76344 Eggenstein Leopoldshafen, Germany

[10] KIT, Gemeinschaftslab Nanoanalyt, D-76021 Karlsruhe, Germany

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2015年 / 119卷 / 19期

关键词：

SULFIDE BUFFER LAYERS; EFFICIENCIES;

D O I：

10.1021/acs.jpcc.5b01622

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have investigated the impact of heat treatment on the chemical structure of the In2S3/CuIn(S,Se)(2) thin-film solar cell interface using X-ray photoelectron and soft X-ray emission spectroscopy. As-grown, we find the formation of a sulfur-poor (indium-rich) In2S3 surface, an abrupt interface, and sulfur atoms in both In2S3 and CuIn(S,Se)(2) chemical environments (as expected for an abrupt interface and a thin over-layer). After a heat treatment at 200 degrees C to simulate subsequent process steps, a strong copper and sodium diffusion into the In2S3 layer is observed. This diffusion extends throughout the layer, indicating the formation of a copper-indium-sulfide phase.

引用

页码：10412 / 10416

页数：5

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