Modeling CMOS gates driving RC interconnect loads

被引:21
作者
Chatzigeorgiou, A [1 ]
Nikolaidis, S
Tsoukalas, I
机构
[1] Aristotelian Univ Salonika, Dept Comp Sci, GR-54006 Salonika, Greece
[2] Aristotelian Univ Salonika, Dept Phys, GR-54006 Salonika, Greece
来源
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-ANALOG AND DIGITAL SIGNAL PROCESSING | 2001年 / 48卷 / 04期
关键词
modeling; propagation delay; short-circuit power;
D O I
10.1109/82.933808
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The problem of estimating the performance of CMOS gates driving RC interconnect loads is addressed in this paper. The widely accepted pi -model is used for the representation of an interconnect line that is driven by an inverter. The output waveform and the propagation delay of the inverter are analytically calculated taking into account the coupling capacitance between input and output and the effect of the short-circuit current. In addition, short-circuit power dissipation is accurately estimated. Once the voltage waveform at both the beginning and the end of an interconnect line are obtained, a simple method is employed in order to calculate the voltage waveform at each point of the line.
引用
收藏
页码:413 / 418
页数:6
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