Mass loss in SiC crystal growth process

被引：0
作者：
Cheng, Jikuan [1 ]
Gab, Jiqiang [1 ]
Yang, Jianfeng [1 ]
Liu, Junlin [1 ]
Jiang, Xian [1 ]
Shi, Yonggui [1 ]
机构：
[1] Xian Jiaotong Univ, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China
来源：
HIGH-PERFORMANCE CERAMICS V, PTS 1 AND 2 | 2008年 / 368-372卷
关键词：
SiC; PVT; crystal growth; mass loss; SUBLIMATION GROWTH; BULK CRYSTALS;
D O I：
10.4028/www.scientific.net/KEM.368-372.1558
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The research investigated the mass loss in SiC crystal growth process by analyzing the effects of the content of Si appending in sources material, growth temperature, growth time and atmosphere pressure. The results indicate that mass loss of total system material (source material + crucible + crystal) and crucible augments with increasing of content of Si in sources material, growth temperature and growth time, but crystal mass gain increases. With increasing of atmosphere pressure, mass loss of system material decreases, crucible mass loss increases, crystal mass gain decreases. Si inclusions in crystal multiply with the increasing of the content of Si in source material.
引用
收藏
页码：1558 / 1560
页数：3
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