The new β-NMR facility at TRIUMF and applications in semiconductors

被引：20

作者：

Chow, KH ^{[1
]}

Salman, Z

Kiefl, RF

MacFarlane, WA

Levy, CDP

Amaudruz, P

Baartman, R

Chakhalian, J

Daviel, S

Hirayama, Y

Hatakeyama, A

Arseneau, DJ

Hitti, B

Kreitzman, SR

Morris, GD

Poutissou, R

Reynard, E

机构：

[1] Univ Alberta, Dept Phys, Edmonton, AB T6G 2J1, Canada

[2] TRIUMF, Vancouver, BC V6T 2A3, Canada

[3] Univ British Columbia, Canadian Inst Adv Res, Dept Phys & Astron, Vancouver, BC V6T 1Z1, Canada

[4] Univ British Columbia, Dept Chem, Vancouver, BC V6T 1Z1, Canada

[5] Osaka Univ, Grad Sch Sci, Dept Phys, Osaka 5600043, Japan

[6] Los Alamos Natl Lab, Los Alamos, NM 87545 USA

来源：

PHYSICA B-CONDENSED MATTER | 2003年 / 340卷

关键词：

beta-NMR; nuclear magnetic resonance; radioactive ion beams; nuclear probes;

D O I：

10.1016/j.physb.2003.09.101

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A new facililty for conducting beta-detected nuclear magnetic resonance (beta-NMR) investigations of condensed matter systems has recently been constucted at TriUniversity Meson Facility in Vancouver, Canada. The unique features of this new facility are described, and some preliminary results on Li-8(+) in GaAs are presented. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：1151 / 1154

页数：4

共 8 条

[1] Ackermann H., 1983, TOPICS CURRENT PHYS, V31, P291, DOI DOI 10.1007/978-3-642-81969-8_6
[2] *GREATION OPTIQUE DUNE INEGALITE DE POPULATION ENTRE LES SOUS-NIVEAUX ZEEMAN DE LETAT FONDAMENTAL DES ATOMES
BROSSEL, J
KASTLER, A
WINTER, J
[J]. JOURNAL DE PHYSIQUE ET LE RADIUM, 1952, 13 (12): : 668 - 668
[3] THE POLARIZATION OF SODIUM ATOMS
HAWKINS, WB
DICKE, RH
[J]. PHYSICAL REVIEW, 1953, 91 (04): : 1008 - 1009
[4] Defect properties of implanted boron in ZnSe
Ittermann, B
Welker, G
Kroll, F
Mai, F
Marbach, K
Peters, D
[J]. PHYSICAL REVIEW B, 1999, 59 (04) : 2700 - 2712
[5] KASTLER A, 1950, J PHYS RADIUM, V11, P225
[6] Diffusivity and defect reactions of lithium in GaAs
Leosson, K
Gislason, HP
[J]. PHYSICAL REVIEW B, 1997, 56 (15) : 9506 - 9511
[7] SITE CHANGES OF ION-IMPLANTED LI IN GAAS BELOW 300-K
LINDNER, G
WINTER, S
HOFSASS, H
JAHN, S
BLASSER, S
RECKNAGEL, E
WEYER, G
[J]. PHYSICAL REVIEW LETTERS, 1989, 63 (02) : 179 - 182
[8] Wahl U, 1997, PHYS REP, V280, P146

← 1 →