Modular EUV Source for the Next Generation Lithography

被引：0

作者：

Sublemontier, Olivier ^{[1
]}

Rosset-Kos, Marylene ^{[1
]}

Ceccotti, Tiberio ^{[1
]}

Hergott, Jean-Francois ^{[1
]}

Auguste, Thierry ^{[1
]}

Normand, Didier ^{[1
]}

Schmidt, Martin ^{[1
]}

Beaumont, Francois ^{[2
]}

Farcage, Daniel ^{[2
]}

Cheymol, Guy ^{[2
]}

Le Caro, Jean-Marc ^{[2
]}

Cormont, Philippe ^{[2
]}

Mauchien, Patrick ^{[2
]}

Thro, Pierre-Yves ^{[2
]}

Skrzypczak, Jacky ^{[3
]}

Muller, Sophie ^{[3
]}

Marquis, Emanuel ^{[3
]}

Barthod, Benoit ^{[4
]}

Gaurand, Isabelle ^{[4
]}

Davenet, Magali ^{[4
]}

Bernard, Roland ^{[4
]}

机构：

[1] CEA, DSM IRAMIS SPAM, F-91191 Gif Sur Yvette, France

[2] CEA, DEN DPC SCP, F-91191 Gif Sur Yvette, France

[3] Thales Laser, Domaine Corbeville, F-91401 Orsay, France

[4] Alcatel Vacuum Technol France, F-74009 Annecy, France

来源：

JOURNAL OF LASER MICRO NANOENGINEERING | 2011年 / 6卷 / 02期

关键词：

EUV lithography; EUV source; laser multiplexing; xenon filament jet; laser-produced plasma;

D O I：

10.2961/jlmn.2011.02.0004

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The present work, performed in the frame of the EXULITE project, was dedicated to the design and characterization of a laser-plasma-produced extreme ultraviolet (EUV) source prototype at 13.5 nm for the next generation lithography. It was conducted in cooperation with two laboratories from CEA, ALCATEL and THALES. One of our approach originalities was the laser scheme modularity. Six Nd:YAG laser beams were focused at the same time on a xenon filament jet to generate the EUV emitting plasma. Multiplexing has important industrial advantages and led to interesting source performances in terms of in-band power, stability and angular emission properties with the filament jet target. A maximum conversion efficiency (CE) value of 0.44% in 2 pi sr and 2% bandwidth was measured, which corresponds to a maximum in band EUV mean power of 7.7 W at a repetition rate of 6 kHz. The EUV emission was found to be stable and isotropic in these conditions. DOI: 10.2961/jlmn.2011.02.0004

引用

页码：113 / 118

页数：6

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