Gate-first integration of Gd-based high-k dielectrics with metal gate electrodes

被引：0

作者：

Gottlob, H. D. B. ^{[1
]}

Schmidt, M. ^{[1
]}

Kurz, H. ^{[1
]}

机构：

[1] AMO GmbH, Adv Microelect Ctr Aachen AMICA, D-52074 Aachen, Germany

来源：

2009 3RD INTERNATIONAL CONFERENCE ON SIGNALS, CIRCUITS AND SYSTEMS (SCS 2009) | 2009年

关键词：

high-k dielectric; metal gate elektrode; gate-first integration; Gd(2)O(3); GdSiO; thermal stability; electron mobility; SILICON; CMOS; TRANSISTORS; TECHNOLOGY; OXIDE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work we present a gate-first process platform for device integration of gadolinium (Gd) based high-k dielectrics and metal gate electrodes. Epitaxial Gd(2)O(3) and GdSiO high-k layers have been integrated with titanium nitride (TiN) gates. Thermal stability of the gate stacks is investigated in detail. Especially the metal inserted polysilicon approach using TiN enables high temperature processing.

引用

页码：126 / 129

页数：4

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