The renaissance of black phosphorus

被引:1190
作者
Ling, Xi [1 ]
Wang, Han [3 ]
Huang, Shengxi [1 ]
Xia, Fengnian [4 ]
Dresselhaus, Mildred S. [1 ,2 ]
机构
[1] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA
[2] MIT, Dept Phys, Cambridge, MA 02139 USA
[3] Univ So Calif, Ming Hsieh Dept Elect Engn, Los Angeles, CA 90089 USA
[4] Yale Univ, Dept Elect Engn, New Haven, CT 06511 USA
基金
美国国家科学基金会;
关键词
black phosphorus; nanoelectronic; optoelectronic; anisotropic; 2D material; FIELD-EFFECT TRANSISTORS; ELECTRICAL-PROPERTIES; ELECTRONIC-PROPERTIES; GRAPHENE TRANSISTORS; BILAYER GRAPHENE; SINGLE-CRYSTALS; BAND-STRUCTURE; HIGH-MOBILITY; PERFORMANCE; STRAIN;
D O I
10.1073/pnas.1416581112
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
One hundred years after its first successful synthesis in the bulk form in 1914, black phosphorus (black P) was recently rediscovered from the perspective of a 2D layered material, attracting tremendous interest from condensed matter physicists, chemists, semiconductor device engineers, and material scientists. Similar to graphite and transition metal dichalcogenides (TMDs), black P has a layered structure but with a unique puckered single-layer geometry. Because the direct electronic band gap of thin film black P can be varied from 0.3 eV to around 2 eV, depending on its film thickness, and because of its high carrier mobility and anisotropic in-plane properties, black P is promising for novel applications in nanoelectronics and nanophotonics different from graphene and TMDs. Black P as a nanomaterial has already attracted much attention from researchers within the past year. Here, we offer our opinions on this emerging material with the goal of motivating and inspiring fellow researchers in the 2D materials community and the broad readership of PNAS to discuss and contribute to this exciting new field. We also give our perspectives on future 2D and thin film black P research directions, aiming to assist researchers coming from a variety of disciplines who are desirous of working in this exciting research field.
引用
收藏
页码:4523 / 4530
页数:8
相关论文
共 108 条
[1]   ELECTRICAL-PROPERTIES OF BLACK PHOSPHORUS SINGLE-CRYSTALS [J].
AKAHAMA, Y ;
ENDO, S ;
NARITA, S .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1983, 52 (06) :2148-2155
[2]   BAND-STRUCTURE AND OPTICAL-PROPERTIES OF BLACK PHOSPHORUS [J].
ASAHINA, H ;
MORITA, A .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (11) :1839-1852
[3]   ELECTRONIC-STRUCTURE OF BLACK PHOSPHORUS IN SELF-CONSISTENT PSEUDOPOTENTIAL APPROACH [J].
ASAHINA, H ;
SHINDO, K ;
MORITA, A .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1982, 51 (04) :1193-1199
[4]  
Avsar A, 2014, ARXIV 14121191
[5]   Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides [J].
Ayari, Anthony ;
Cobas, Enrique ;
Ogundadegbe, Ololade ;
Fuhrer, Michael S. .
JOURNAL OF APPLIED PHYSICS, 2007, 101 (01)
[6]   ELECTRICAL-PROPERTIES OF BLACK PHOSPHORUS SINGLE-CRYSTALS PREPARED BY THE BISMUTH-FLUX METHOD [J].
BABA, M ;
IZUMIDA, F ;
MORITA, A ;
KOIKE, Y ;
FUKASE, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (08) :1753-1758
[7]   Two new modifications of phosphorus. [J].
Bridgman, PW .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1914, 36 :1344-1363
[8]   Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films [J].
Britnell, L. ;
Ribeiro, R. M. ;
Eckmann, A. ;
Jalil, R. ;
Belle, B. D. ;
Mishchenko, A. ;
Kim, Y. -J. ;
Gorbachev, R. V. ;
Georgiou, T. ;
Morozov, S. V. ;
Grigorenko, A. N. ;
Geim, A. K. ;
Casiraghi, C. ;
Castro Neto, A. H. ;
Novoselov, K. S. .
SCIENCE, 2013, 340 (6138) :1311-1314
[9]   REFINEMENT OF CRYSTAL STRUCTURE OF BLACK PHOSPHOROUS [J].
BROWN, A ;
RUNDQVIST, S .
ACTA CRYSTALLOGRAPHICA, 1965, 19 :684-+
[10]   Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating [J].
Buscema, Michele ;
Groenendijk, Dirk J. ;
Steele, Gary A. ;
van der Zant, Herre S. J. ;
Castellanos-Gomez, Andres .
NATURE COMMUNICATIONS, 2014, 5