A quad-band GSM/EDGE-compliant SiGe-bipolar power amplifier with 35.9 dBm/32.3 dBm output power at 56%/44% PAE in low/high-band

被引：2

作者：

Sogl, Bernhard ^{[1
,2
]}

Bakalski, Winfried ^{[1
]}

Zannoth, Markus ^{[1
]}

Asam, Michael ^{[1
]}

Kapfelsperger, Boris ^{[1
]}

Berkner, Joerg ^{[1
]}

Eisener, Berrid ^{[1
]}

Oesterreicher, Wilfried ^{[1
]}

Rampf, Erwin ^{[1
]}

Scholtz, Arpad L. ^{[2
]}

Klepser, Bernd-Ulrich ^{[1
]}

机构：

[1] Infineon Technol AG, D-85739 Neubiberg, Germany

[2] Vienna Univ Technol, Inst Commun & Radio Frequency Engn, A-1040 Vienna, Austria

来源：

PROCEEDINGS OF THE 2007 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM) | 2007年

关键词：

power amplifiers; silicon bipolar; RF circuits; analog circuits; GSM; EDGE; mobile phone;

D O I：

10.1109/BIPOL.2007.4351846

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A standard-compliant integrated quad-band GSM/EDGE radio frequency power amplifier for 824-915MHz and 1710-1910MHz has been realized in a 0.35-mu m SiGe-Bipolar technology. The chip integrates two single-ended 3-stage power amplifiers and a bias-control circuit for power control, band select and mode dependent quiescent currents. At 3.3V a saturated output power of 35.9dBm is achieved at 830MHz and 32.3 dBm at 1710 MHz. The respective peak PAE is 56 % for low-band and 44 % for high-band.

引用

页码：98 / +

页数：2

共 7 条

[1] A quad-band GSM/EDGE-compliant SiGe-Bipolar power amplifier
Bakalski, Winfried
Sogl, Bernhard
Zannoth, Markus
Asam, Michael
Kapfelsperger, Boris
Berkner, Joerg
Eisener, Bernd
Thomann, Wolfgang
Marcon, Siegfried
Oesterreicher, Wilfried
Napieralska, Ewa
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Scholtz, Arpad L.
Klepser, Bernd-Ulrich
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2008, 43 (09) : 1920 - 1930
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