Optimization of the integrated circuit technology

被引：3

作者：

Kuzmicz, WB ^{[1
]}

Malyshev, VS ^{[1
]}

Nelayev, VV ^{[1
]}

Stempitsky, VR ^{[1
]}

机构：

[1] Warsaw Univ Technol, Inst Microelect & Optoelect, PL-00662 Warsaw, Poland

来源：

FOURTH INTERNATIONAL WORKSHOP ON NONDESTRUCTIVE TESTING AND COMPUTER SIMULATIONS IN SCIENCE AND ENGINEERING | 2001年 / 4348卷

关键词：

deviations; device performances; IC technology/device/circuit design and simulation; n-MOS transistor; optimization; process parameters; response surface methodology; SPICE; statistical analysis; SUPREM; SYPRUS;

D O I：

10.1117/12.417685

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

Process parameters optimization in device/integrated circuits (IC) technology is an important and essential stage in the modem industrial cycle of the microelectronics industry. The use of the progressive computer and information technique enables to resolve this problem. Algorithms and results are presented for optimization of process parameters from the viewpoint of providing with acceptable deviations of IC devices performances. As input data for optimization we used results of real experiments obtained in industrial conditions. SPICE parameters of n-MOS transistor were analysed.

引用

页码：431 / 434

页数：4