X-BAND CMOS POWER AMPLIFIER USING MODE-LOCKING METHOD FOR SENSOR APPLICATIONS

被引：14
作者：
Lee, C. [1 ]
Park, J. [1 ]
Park, C. [1 ]
机构：
[1] Soongsil Univ, Sch Elect Engn, Coll Informat Technol, Seoul 156743, South Korea
来源：
JOURNAL OF ELECTROMAGNETIC WAVES AND APPLICATIONS | 2012年 / 26卷 / 5-6期
基金：
新加坡国家研究基金会;
关键词：
DISTRIBUTED ACTIVE-TRANSFORMER; 1.9-GHZ; DESIGN; NOISE;
D O I：
10.1080/09205071.2012.710783
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An X-band CMOS power amplifier using a mode-locking method for sensor applications is designed with a TSMC 0.13-mu m RF CMOS process. The cascode structure is adapted to remove the reliability problems between the drain and gate voltages of the NMOS. Additionally, the mode-locking method is used to improve the efficiency and gain of the amplifier. We proposed the method to adapt the mode-locking topology to the cascode structure. The measured power added efficiency is 27%, while the saturated output power is 14 dBm at an operation frequency of 8.9GHz. The designed chip size is 700 by 550 mu m(2).
引用
收藏
页码：633 / 640
页数：8
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